Rectifying ZnO–Na/ZnO–Al aerogels p-n homojunctions
نویسندگان
چکیده
Semiconductor ZnO aerogels were synthesized by a sol–gel process with different concentrations (2.5–7.5 wt.%) of Al (n-type) or Na (p-type) and dried under supercritical CO2. The materials calcined at 500 °C to remove the organic content crystallize ZnO. microstructure ZnO-based comprises porous structure hexagonal platelet-shaped interconnected particles. bandgap doped decreased significantly compared pure, undoped aerogels, while their specific surface area increased. For electrical characterization ZnO–Na/ZnO–Al junctions, deposited on commercial glass substrates coated indium tin oxide (ITO) drop casting method. I-V curves p-n homojuntions revealed characteristic diode rectifying behavior.
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ژورنال
عنوان ژورنال: Journal of Materials Science: Materials in Electronics
سال: 2022
ISSN: ['1573-482X', '0957-4522']
DOI: https://doi.org/10.1007/s10854-022-07925-3